IAUZ40N06S5N105ATMA1
MOSFET_)40V 60V) PG-TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUZ40N06S5N105ATMA1, offers a 60V drain-source breakdown voltage and a continuous drain current of 40A (Tj) at 25°C. This device features a low on-resistance of 10.5mOhm at 20A, 10V, and a maximum power dissipation of 42W (Tc). Designed for surface mounting, it utilizes the PG-TSDSON-8-32 package. The gate charge (Qg) is 16.3 nC at 10V, and input capacitance (Ciss) is 1099 pF at 30V. Operating temperature ranges from -55°C to 175°C (Tj). This automotive-qualified component, meeting AEC-Q101 standards, is suitable for demanding applications across automotive and industrial sectors.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tj) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 13µA |
| Supplier Device Package | PG-TSDSON-8-32 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1099 pF @ 30 V |
| Qualification | AEC-Q101 |
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