IAUZ40N06S5L050ATMA1
MOSFET_)40V 60V) PG-TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUZ40N06S5L050ATMA1, features a 60 V drain-source voltage and a maximum continuous drain current of 90 A at 25°C. This AEC-Q101 qualified device offers a low on-resistance of 5 mOhm at 20 A and 10 V, with a gate charge of 36.7 nC at 10 V. Designed for surface mounting in the PG-TSDSON-8-33 package, it dissipates up to 71 W at 25°C (Tc). The operating temperature range is -55°C to 175°C. This component is suitable for automotive applications.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tj) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 29µA |
| Supplier Device Package | PG-TSDSON-8-33 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 30 V |
| Qualification | AEC-Q101 |
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