IAUZ30N10S5L240ATMA1
MOSFET N-CH 100V 30A 8TSDSON-32Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IAUZ30N10S5L240ATMA1 is an OptiMOS™-5 series N-channel power MOSFET designed for demanding automotive applications. This component features a 100V drain-source voltage and a continuous drain current of 30A (Tc) at 25°C. With a low on-resistance of 24mOhm maximum at 15A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 45.5W (Tc). The device is housed in an 8-PowerTDFN (PG-TSDSON-8-32) package for surface mounting, suitable for environments operating between -55°C and 175°C. Key parameters include a gate charge of 14nC at 10V and input capacitance of 832pF at 50V. This component is AEC-Q101 qualified, signifying its suitability for the rigorous demands of the automotive industry.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 15µA |
| Supplier Device Package | PG-TSDSON-8-32 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 832 pF @ 50 V |
| Qualification | AEC-Q101 |
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