IAUZ30N08S5N186ATMA1
MOSFET_(75V 120V( PG-TSDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUZ30N08S5N186ATMA1, is a surface-mount device designed for high-efficiency power conversion. This MOSFET features a Drain-Source Voltage (Vdss) of 80 V and a continuous drain current capability of 30 A (Tj) at 25°C. With a low on-resistance of 18.6 mOhm at 15 A and 10 V Vgs, it minimizes conduction losses. The device is housed in an 8-PowerTDFN package (PG-TSDSON-8-32) and operates across a temperature range of -55°C to 175°C. Key electrical parameters include a maximum power dissipation of 41W (Tc) and a Gate Charge (Qg) of 12.1 nC at 10 V. This component is suitable for applications in power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tj) |
| Rds On (Max) @ Id, Vgs | 18.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 13µA |
| Supplier Device Package | PG-TSDSON-8-32 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 759 pF @ 40 V |
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