IAUZ18N10S5L420ATMA1
MOSFET N-CH 100V 18A TSDSON-8-32Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™-5 IAUZ18N10S5L420ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage and a continuous drain current capability of 18A at 25°C (Tc). With a low on-resistance of 42mOhm maximum at 9A and 10V Vgs, it offers excellent conduction efficiency. The device is housed in a PG-TSDSON-8-32 package, a surface-mount solution optimized for thermal performance, allowing for up to 30W (Tc) power dissipation. Key electrical characteristics include a gate charge (Qg) of 8 nC maximum and input capacitance (Ciss) of 470 pF maximum. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for power management solutions across various industries including automotive, industrial automation, and consumer electronics.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA |
| Supplier Device Package | PG-TSDSON-8-32 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 50 V |
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