IAUT300N08S5N012ATMA1
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUT300N08S5N012ATMA1, is engineered for demanding applications. This surface mount device features an 80V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 300A at 25°C with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 1.2mOhm is achieved at 100A and 10V gate-source voltage. Its high thermal performance is facilitated by the PG-HSOF-8-1 package, also known as 8-PowerSFN, suitable for high-power density designs. Key parameters include a gate charge (Qg) of 231 nC at 10V and input capacitance (Ciss) of 16250 pF at 40V. This automotive-grade MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is supplied in tape and reel packaging.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 275µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 231 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16250 pF @ 40 V |
| Qualification | - |
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