IAUT165N08S5N029ATMA1
MOSFET N-CH 80V 165A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel MOSFET, part number IAUT165N08S5N029ATMA1, offers a 80V drain-source voltage and 165A continuous drain current at 25°C. This surface mount device features a low on-resistance of 2.9mOhm at 80A and 10V Vgs, with a maximum gate charge of 90 nC at 10V. The IAUT165N08S5N029ATMA1 is housed in an 8-PowerSFN (PG-HSOF-8-1) package and supports a maximum power dissipation of 167W. Its robust construction allows operation across a wide temperature range of -55°C to 175°C. This component is suitable for demanding applications in sectors such as automotive and industrial power management.
Additional Information
Series: OptiMOS™-5RoHS Status: unknownManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 165A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 108µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6370 pF @ 40 V |
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