IAUS300N04S4N007ATMA1
MOSFET_(20V 40V) PG-HSOG-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUS300N04S4N007ATMA1, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 300A at 25°C case temperature. This device features a low on-resistance of 0.74mOhm maximum at 100A and 10V gate drive, with a maximum power dissipation of 375W (Tc). The IAUS300N04S4N007ATMA1 utilizes surface mount technology in an 8-PowerSMD, Gull Wing (PG-HSOG-8-1) package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 342 nC at 10V and input capacitance (Ciss) of 27356 pF at 25V. Its operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in automotive, industrial power supply, and electric vehicle systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.74mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 275µA |
| Supplier Device Package | PG-HSOG-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 342 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27356 pF @ 25 V |
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