IAUCN10S7N021ATMA1
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 N-Channel Power MOSFET, part number IAUCN10S7N021ATMA1, offers superior performance for demanding automotive applications. This device features a 100 V drain-source breakdown voltage and a continuous drain current capability of 175 A at 25°C (Tj). With a low on-resistance of 2.1 mOhm at 88 A and 10 V, it minimizes conduction losses. The IAUCN10S7N021ATMA1 is designed for efficient power management, dissipating up to 217 W at 25°C (Tc). Its 8-PowerTDFN package, specifically the PG-TDSON-8-53, facilitates surface mounting for compact designs. Qualified to AEC-Q101 standards and suitable for operation between -55°C and 175°C (TJ), this MOSFET is ideal for high-power switching applications in electric vehicles, power electronics, and advanced driver-assistance systems.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7153 pF @ 50 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
IAUCN08S7N013ATMA1
MOSFET_(75V 120V(
IQE004NE1LM7CGSCATMA1
TRENCH <= 40V
IAUCN04S7N004ATMA1
MOSFET_(20V 40V)
