IAUCN08S7N019ATMA1
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 N-Channel Power MOSFET, part number IAUCN08S7N019ATMA1. This device features an 80 V drain-to-source voltage and a continuous drain current capability of 175 A at 25°C. The MOSFET is optimized for high-efficiency power conversion with a typical gate charge of 19 nC at 10 V. Designed for surface mounting within the PG-TDSON-8-43 package, it operates across a wide temperature range from -55°C to 175°C. This component is qualified to AEC-Q101 standards, making it suitable for demanding automotive applications. It utilizes advanced MOSFET technology for superior performance.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TDSON-8-43 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Qualification | AEC-Q101 |
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