IAUCN08S7N013ATMA1
MOSFET_(75V 120V(Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 series N-Channel Power MOSFET, part number IAUCN08S7N013ATMA1. This AEC-Q101 qualified component features an 80V drain-source voltage (Vds) and a continuous drain current (Id) of 274A at 25°C (Tj). The Rds(on) is a maximum of 1.3mOhm at 88A and 10V Vgs. Designed for high-efficiency power conversion, this device offers a maximum power dissipation of 219W (Tc). Key parameters include a gate charge (Qg) of 116 nC at 10V Vgs and input capacitance (Ciss) of 8402 pF at 40V Vds. The mounting type is surface mount within a PG-TDSON-8-53 package. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for automotive applications.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 274A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 219W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8402 pF @ 40 V |
| Qualification | AEC-Q101 |
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