IAUCN04S7N004ATMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 series N-Channel power MOSFET, part number IAUCN04S7N004ATMA1, offers a 40V drain-source voltage and a continuous drain current of 175A at 25°C. This device features a low on-resistance of 0.44mOhm maximum at 88A and 10V Vgs, with a gate charge of 169 nC maximum at 10V Vgs. Designed for high-efficiency power conversion, the IAUCN04S7N004ATMA1 is qualified to AEC-Q101 standards and operates across a temperature range of -55°C to 175°C. The 219W power dissipation at 25°C (Tc) and its PG-TDSON-8-53 package make it suitable for demanding automotive applications. This component is supplied in Tape & Reel packaging.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 175A |
| Rds On (Max) @ Id, Vgs | 0.44mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 219W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11310 pF @ 20 V |
| Qualification | AEC-Q101 |
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