IAUCN04S7L004ATMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 7 IAUCN04S7L004ATMA1 is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and is housed in a PG-TDSON-8-53 package, suitable for surface mount assembly. With a maximum Gate Charge (Qg) of 190 nC at 10V, it offers efficient switching characteristics. The device operates across a wide temperature range of -55°C to 175°C and is AEC-Q101 qualified, ensuring reliability in automotive environments. Its advanced MOSFET technology provides robust performance for power management solutions in areas such as automotive powertrain, chassis control, and advanced driver-assistance systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Qualification | AEC-Q101 |
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