IAUC90N10S5N062ATMA1
MOSFET N-CH 100V 90A TDSON-8-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, IAUC90N10S5N062ATMA1, offers a 100 V Drain-to-Source Voltage (Vdss) and 90 A continuous drain current (Id) at 25°C (Tc). This AEC-Q101 qualified component features a low on-resistance of 6.2 mOhm maximum at 45 A and 10 V (Vgs). The IAUC90N10S5N062ATMA1 is housed in an 8-PowerTDFN (PG-TDSON-8-34) surface-mount package, providing 115 W maximum power dissipation (Tc). Key parameters include a gate charge (Qg) of 36 nC maximum at 10 V (Vgs) and input capacitance (Ciss) of 3275 pF maximum at 50 V (Vds). Designed for automotive applications, this MOSFET operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 59µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3275 pF @ 50 V |
| Qualification | AEC-Q101 |
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