IAUC70N08S5N074ATMA1
MOSFET N-CH 80V 70A 8TDSON-33Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IAUC70N08S5N074ATMA1 is an N-Channel Power MOSFET from the OptiMOS™-5 series. This component is designed for high-performance applications, featuring a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 70A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 7.4mOhm at 35A and 10V, with a maximum power dissipation of 83W (Tc). Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 2080 pF at 40V. The IAUC70N08S5N074ATMA1 is AEC-Q101 qualified, making it suitable for automotive applications. It is supplied in a PG-TDSON-8-33 package, suitable for surface mounting, and available on tape and reel. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 36µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 40 V |
| Qualification | AEC-Q101 |
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