IAUC64N08S5L075ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUC64N08S5L075ATMA1. This surface mount device features an 80V Drain-Source Voltage (Vdss) and a continuous drain current capability of 64A (Tj) at 25°C. The Rds On is specified at a maximum of 7.5mOhm at 32A and 10V gate drive. Key parameters include a maximum gate charge (Qg) of 37nC at 10V and input capacitance (Ciss) of 2106pF at 40V. The unit is packaged in a PG-TDSON-8-33 and supplied on tape and reel. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tj) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2106 pF @ 40 V |
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