IAUC60N10S5L110ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC60N10S5L110ATMA1 is an N-Channel OptiMOS™ series power MOSFET. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 60A at 25°C, with a maximum power dissipation of 88W. The low on-resistance is a key characteristic, with a maximum Rds On of 11mOhm at 30A and 10V. The device is housed in a compact PG-TDSON-8-33 package for surface mounting and operates across a temperature range of -55°C to 175°C. Key parameters include a maximum gate charge (Qg) of 24.1 nC at 10V and an input capacitance (Ciss) of 1665 pF at 50V. This component is suitable for demanding applications in sectors such as automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 30µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1665 pF @ 50 V |
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