IAUC60N06S5N074ATMA1
MOSFET_)40V 60V) PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IAUC60N06S5N074ATMA1, an N-Channel OptiMOS™-5 series power MOSFET, features a 60 V drain-source voltage and a continuous drain current of 60 A (Tj) at 25°C. This component is qualified to AEC-Q101 and designed for automotive applications. The PG-TDSON-8-33 package offers a surface mount solution with a maximum power dissipation of 52 W (Tc). Key electrical characteristics include a maximum Rds(on) of 7.4 mOhm at 30 A and 10 V, a gate charge (Qg) of 20 nC (max) at 10 V, and input capacitance (Ciss) of 1461 pF (max) at 30 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications within the automotive sector.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tj) |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 19µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1461 pF @ 30 V |
| Qualification | AEC-Q101 |
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