IAUC50N08S5N102ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IAUC50N08S5N102ATMA1, offers a 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tj). This surface mount device features a low on-resistance (Rds On) of 10.2mOhm at 25A and 10V (Vgs). The IAUC50N08S5N102ATMA1 is housed in a PG-TDSON-8-33 package and supports a maximum power dissipation of 60W (Tc). Key parameters include a gate charge (Qg) of 21 nC at 10V and an input capacitance (Ciss) of 1394 pF at 40V. This component is suitable for applications in power management and industrial motor control. It operates within a temperature range of -55°C to 175°C (Tj) and is supplied on tape and reel (TR).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 24µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1394 pF @ 40 V |
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