IAUC40N08S5L140ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IAUC40N08S5L140ATMA1 is an N-Channel OptiMOS™ series power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 40A at 25°C, with a maximum power dissipation of 56W. The low on-resistance (Rds On) of 14mOhm at 20A and 10V Vgs, combined with optimized gate charge (Qg) of 18.6 nC, ensures efficient operation. The device is housed in an 8-PowerTDFN (PG-TDSON-8-33) package for surface mounting, suitable for high-density designs. Operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power supplies, and server applications where high efficiency and robust performance are critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 15µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1078 pF @ 40 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
