IAUC26N10S5L245ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC26N10S5L245ATMA1 is an N-Channel OptiMOS™ Power MOSFET designed for demanding power applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 26A at 25°C (Tj). The low on-resistance (Rds On) is specified at a maximum of 24.5mOhm at 13A and 10V Vgs. Key parameters include a gate charge (Qg) of 12 nC at 10V Vgs and an input capacitance (Ciss) of 762 pF at 50V Vds. The device offers a maximum power dissipation of 40W (Tc) and operates across a wide temperature range of -55°C to 175°C (Tj). Mounting is facilitated via a surface mount PG-TDSON-8-33 package, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tj) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 13µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 762 pF @ 50 V |
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