IAUC24N10S5L300ATMA1
MOSFET N-CH 100V 24A TDSON-8-33Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IAUC24N10S5L300ATMA1, an N-Channel OptiMOS™-5 series MOSFET. This device features a 100 V drain-source voltage and a continuous drain current of 24 A at 25°C (Tc), with a maximum power dissipation of 38 W (Tc). The ON-resistance (Rds On) is a maximum of 30 mOhm at 12 A and 10 V Vgs. Key parameters include a gate charge of 11 nC (max) at 10 V Vgs and input capacitance (Ciss) of 670 pF (max) at 50 V Vds. The IAUC24N10S5L300ATMA1 is packaged in a PG-TDSON-8-33, suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in industrial and automotive applications.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 12µA |
| Supplier Device Package | PG-TDSON-8-33 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 50 V |
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