IAUC120N06S5N032ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUC120N06S5N032ATMA1, features a 60 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tj). This surface mount device, housed in a PG-TDSON-8-34 package, offers a low on-resistance of 3.23 mOhm at 60 A and 10 V. Key parameters include a gate charge of 47 nC (max) at 10 V and an input capacitance of 3446 pF (max) at 30 V. The MOSFET supports a maximum gate-source voltage of ±20 V and a threshold voltage of 3.4 V at 44 µA. With a maximum power dissipation of 94 W (Tc), it operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.23mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 44µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3446 pF @ 30 V |
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