IAUC120N06S5N017ATMA1
MOSFET N-CH 60V 120A TDSON-8-43Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IAUC120N06S5N017ATMA1 is an N-channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and a continuous drain current capability of 120A at 25°C (Tj), with a maximum power dissipation of 167W (Tc). The low on-resistance of 1.7mOhm at 60A and 10V (Vgs) ensures efficient power transfer. It is housed in a PG-TDSON-8-43 package for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge of 95.9 nC at 10V and input capacitance (Ciss) of 6952 pF at 30V. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 94µA |
| Supplier Device Package | PG-TDSON-8-43 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6952 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
