IAUC120N06S5N015ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUC120N06S5N015ATMA1, offers a 60V drain-source voltage and 120A continuous drain current at 25°C. This surface mount device, housed in a PG-TDSON-8-43 package, features a low on-resistance of 1.5mOhm at 60A and 10V Vgs. With a maximum power dissipation of 167W at 25°C (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), it is qualified to AEC-Q101 standards. The IAUC120N06S5N015ATMA1 is designed for demanding automotive applications requiring high efficiency and robust performance. Key parameters include a gate charge of 96 nC at 10V and input capacitance of 6952 pF at 30V. The device supports drive voltages from 7V to 10V and has a ±20V maximum gate-source voltage.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 94µA |
| Supplier Device Package | PG-TDSON-8-43 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6952 pF @ 30 V |
| Qualification | AEC-Q101 |
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