IAUC120N06S5N011ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC120N06S5N011ATMA1 is an N-Channel Power MOSFET from the OptiMOS™-5 series. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 310 A at 25°C (Tj). The low on-resistance is specified at a maximum of 1.12 mOhm at 60 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 137 nC (max) at 10 V and an Input Capacitance (Ciss) of 9822 pF (max) at 30 V. This component is housed in an 8-PowerTDFN (PG-TDSON-8-53) package, suitable for surface mounting. With a maximum power dissipation of 188 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is designed for demanding applications, including automotive power systems and high-power switching.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 310A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.12mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9822 pF @ 30 V |
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