IAUC120N06S5L032ATMA1
MOSFET N-CH 60V 120A TDSON-8-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies IAUC120N06S5L032ATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage of 60V and a continuous drain current of 120A at 25°C (Tj), with a maximum power dissipation of 94W (Tc). It is housed in a PG-TDSON-8-34 package suitable for surface mounting. Key electrical parameters include a low on-resistance of 3.2mOhm at 60A and 10V, a gate charge (Qg) of 51.5 nC at 10V, and input capacitance (Ciss) of 3823 pF at 30V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±16V. Its threshold voltage (Vgs(th)) is 2.2V at 44µA. This MOSFET is commonly utilized in automotive, industrial power control, and high-power switching applications. The component is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 44µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 51.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3823 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
