IAUC120N06S5L022ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC120N06S5L022ATMA1 is a high-performance N-Channel Power MOSFET from the OptiMOS™-5 series. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 170A (Tj) at 25°C. The device offers a low on-resistance (Rds On) of 2.2mOhm at 60A and 10V, with a maximum power dissipation of 136W (Tc).
Designed for efficient power switching, the IAUC120N06S5L022ATMA1 utilizes surface mount technology, packaged in a PG-TDSON-8-34 format. Key parameters include a gate charge (Qg) of 77 nC (Max) at 10V and input capacitance (Ciss) of 5651 pF (Max) at 30V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications across various industries, including automotive, industrial power supplies, and electric vehicle systems where robust power handling and low conduction losses are critical. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 65µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5651 pF @ 30 V |
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