IAUC120N06S5L015ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC120N06S5L015ATMA1 is an N-Channel OptiMOS™-5 series power MOSFET. This device features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 235 A at 25°C (Tj). The IAUC120N06S5L015ATMA1 offers a low on-resistance (Rds On) of 1.5 mOhm at 60 A and 10 V, with a maximum power dissipation of 167 W (Tc). Key parameters include a maximum gate charge (Qg) of 114 nC at 10 V and input capacitance (Ciss) of 8193 pF at 30 V. This surface mount component utilizes the PG-TDSON-8-43 package and operates across a temperature range of -55°C to 175°C (TJ). It is suitable for applications in automotive and industrial power management.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 235A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 94µA |
| Supplier Device Package | PG-TDSON-8-43 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8193 pF @ 30 V |
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