IAUC120N06S5L011ATMA1
MOSFET_)40V 60V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IAUC120N06S5L011ATMA1 is an N-Channel Power MOSFET from the OptiMOS™5 series. This device features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 310 A at Tj. The low on-resistance (Rds On) of 1.1 mOhm at 60 A and 10 V gate-source voltage, coupled with a maximum power dissipation of 188 W (Tc), makes it suitable for high-power applications. Key parameters include a gate charge (Qg) of 160 nC at 10 V and input capacitance (Ciss) of 11400 pF at 30 V. It operates within an extended temperature range of -55°C to 175°C (TJ) and is available in a PG-TDSON-8-53 package for surface mounting, supplied on tape and reel. This component is utilized in demanding sectors such as automotive and industrial power management.
Additional Information
Series: OptiMOS™5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 310A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 30 V |
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