IAUC120N04S6N010ATMA1
MOSFET N-CH 40V 150A TDSON-8-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-6 N-Channel Power MOSFET IAUC120N04S6N010ATMA1 offers a 40V drain-source voltage and a continuous drain current of 150A at 25°C (Tc). This device features a low on-resistance of 1.03mOhm maximum at 60A and 10V Vgs, enabling high efficiency in power conversion applications. The IAUC120N04S6N010ATMA1 is housed in a PG-TDSON-8-34 package, designed for surface mounting with a tape and reel delivery. Key characteristics include a gate charge of 108 nC maximum at 10V Vgs and an input capacitance of 6878 pF maximum at 25V Vds. Its robust thermal performance allows for up to 150W of power dissipation (Tc), with an operating temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: OptiMOS™-6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.03mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 90µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6878 pF @ 25 V |
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