IAUC120N04S6N008ATMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IAUC120N04S6N008ATMA1, offers 40V drain-to-source voltage and a continuous drain current of 43A (Ta) at 25°C. This AEC-Q101 qualified component features a low Rds(on) of 0.8mOhm at 60A and 10V Vgs, with a maximum power dissipation of 150W (Tc). Designed for surface mount applications, it utilizes the PG-TDSON-8-43 package. Key electrical parameters include a gate charge of 110 nC (Max) at 10V Vgs and input capacitance of 7150 pF (Max) at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.8mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 90µA |
| Supplier Device Package | PG-TDSON-8-43 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7150 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSZ021N04LS6ATMA1
MOSFET N-CH 40V 25A/40A TSDSON
SPA11N65C3XKSA1
MOSFET N-CH 650V 11A TO220-FP
IPP082N10NF2SAKMA1
TRENCH >=100V
