IAUC120N04S6N006ATMA1
IAUC120N04S6N006ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUC120N04S6N006ATMA1, offers a 40 V drain-source voltage and a continuous drain current capability of 120 A at 25°C (Tj). This AEC-Q101 qualified component features a low on-resistance of 0.6 mOhm at 60 A and 10 V, with a maximum power dissipation of 187 W (Tc). Designed for demanding automotive applications, it is housed in a compact PG-TDSON-8-53 package suitable for surface mounting and delivered on tape and reel. Key electrical characteristics include a gate charge of 151 nC at 10 V and an input capacitance of 1117 pF at 25 V. The operating temperature range extends from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10117 pF @ 25 V |
| Qualification | AEC-Q101 |
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