IAUC120N04S6L009ATMA1
MOSFET N-CH 40V 150A TDSON-8-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-6 series N-Channel Power MOSFET, part number IAUC120N04S6L009ATMA1, offers a 40 V drain-source voltage and a continuous drain current of 150 A at 25°C (Tc). This device features a maximum on-resistance of 960 mOhm at 60 A and 10 V, with a gate charge (Qg) of 128 nC at 10 V. The IAUC120N04S6L009ATMA1 utilizes N-Channel MOSFET technology and is housed in an 8-PowerTDFN (PG-TDSON-8-34) surface mount package, supplied on tape and reel. Its maximum power dissipation is 150 W (Tc), and it operates within a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: OptiMOS™-6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 90µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7806 pF @ 25 V |
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