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IAUC120N04S6L008ATMA1

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IAUC120N04S6L008ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IAUC120N04S6L008ATMA1 is a 40V N-Channel power MOSFET. This device features a maximum continuous drain current of 120A at 25°C (Tc) and a low on-resistance of 0.8mOhm at 60A, 10V. The IAUC120N04S6L008ATMA1 is packaged in an 8-PowerTDFN (PG-TDSON-8-33) and is supplied on tape and reel. It is designed for efficient power conversion and switching applications, commonly found in automotive systems. Key electrical characteristics include a gate charge of 140nC at 10V and input capacitance of 7910pF at 25V. The operating temperature range is -55°C to 175°C (TJ), and it meets AEC-Q101 qualification standards.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs0.8mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id2V @ 90µA
Supplier Device PackagePG-TDSON-8-33
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7910 pF @ 25 V
QualificationAEC-Q101

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