IAUC120N04S6L005ATMA1
IAUC120N04S6L005ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IAUC120N04S6L005ATMA1 is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40 V drain-source voltage and an impressive continuous drain current capability of 120 A (Tj) at 25°C. With a low on-resistance of 0.55 mOhm at 60 A and 10 V Vgs, it minimizes conduction losses, contributing to higher system efficiency. The device offers a maximum power dissipation of 187 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Its 8-PowerTDFN package (PG-TDSON-8-53) with surface mount capability is ideal for high-density board designs. Key electrical characteristics include a maximum gate charge (Qg) of 177 nC at 10 V and input capacitance (Ciss) of 11203 pF at 25 V. This MOSFET is AEC-Q101 qualified, ensuring reliability for automotive power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.55mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TDSON-8-53 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11203 pF @ 25 V |
| Qualification | AEC-Q101 |
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