IAUC100N10S5N040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-5 IAUC100N10S5N040ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm at 50A and 10V, facilitated by its advanced OptiMOS™-5 technology. With a maximum power dissipation of 167W (Tc), it is suitable for high-power switching and power management solutions. The IAUC100N10S5N040ATMA1 is housed in an 8-PowerTDFN (PG-TDSON-8-34) package for surface mounting, offering efficient thermal performance. Key electrical parameters include a gate charge (Qg) of 78 nC (max) at 10V and input capacitance (Ciss) of 5200 pF (max) at 50V. This MOSFET is engineered for operation across a wide temperature range from -55°C to 175°C (TJ). Typical industry applications include automotive power systems, industrial motor control, and high-efficiency power supplies.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 90µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 50 V |
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