IAUC100N10S5L040ATMA1
MOSFET N-CH 100V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUC100N10S5L040ATMA1 is a high-performance N-channel Power MOSFET from the OptiMOS™-5 series. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 100A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The extremely low on-resistance (Rds On) of 4mOhm at 50A and 10V facilitates efficient power conversion.
Designed for surface mounting, this MOSFET is housed in an 8-PowerTDFN package (PG-TDSON-8-34) and is supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 78 nC (max) at 10V and input capacitance (Ciss) of 5200 pF (max) at 50V. The gate drive voltage range is specified from 4.5V to 10V, with a maximum Vgs of ±20V. Operating temperature capabilities range from -55°C to 175°C (TJ). This component is widely utilized in automotive applications, industrial power supplies, and motor control systems.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 90µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 50 V |
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