IAUC100N08S5N043ATMA1
MOSFET N-CH 80V 100A 8TDSON-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-5 series IAUC100N08S5N043ATMA1 is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm at 50A and 10V, and a gate charge (Qg) of 56 nC at 10V. Operating within a temperature range of -55°C to 175°C (TJ), it is qualified to AEC-Q101 standards. The IAUC100N08S5N043ATMA1 utilizes an 8-PowerTDFN package (PG-TDSON-8-34) and is supplied in tape and reel packaging. This MOSFET is suitable for applications requiring high power density and efficient switching in electric vehicle powertrains, onboard chargers, and other automotive power management systems.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 63µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3860 pF @ 40 V |
| Qualification | AEC-Q101 |
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