IAUC100N08S5N034ATMA1
MOSFET_(75V 120V( PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUC100N08S5N034ATMA1, offers a 80V drain-source voltage and 132A continuous drain current at 25°C (Tj). This surface mount device features a maximum power dissipation of 136W (Tc) and a low on-resistance of 3.4mOhm at 50A, 10V. The PG-TDSON-8-34 package enables efficient thermal management. Key parameters include a gate charge of 66 nC at 10V and input capacitance of 4559 pF at 40V. It operates across a wide temperature range of -55°C to 175°C (TJ) with a ±20V maximum gate-source voltage. This component is suitable for applications in automotive, industrial power, and high-power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 132A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 78µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4559 pF @ 40 V |
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