IAUC100N08S5N031ATMA1
MOSFET N-CH 80V 100A TDSON-8-34Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 IAUC100N08S5N031ATMA1 is an N-channel Power MOSFET designed for demanding automotive applications. This component features an 80V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The low on-resistance of 3.1mOhm at 50A and 10V gate-source voltage, coupled with a gate charge of 76 nC (max) at 10V, ensures efficient switching performance. Fabricated using advanced MOSFET technology, this device is qualified to AEC-Q101 standards and operates across a wide temperature range of -55°C to 175°C (TJ). The IAUC100N08S5N031ATMA1 is supplied in a PG-TDSON-8-34 package suitable for surface mounting and is available on tape and reel.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 95µA |
| Supplier Device Package | PG-TDSON-8-34 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5525 pF @ 40 V |
| Qualification | AEC-Q101 |
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