IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IAUC100N04S6N022ATMA1 is a high-performance N-channel power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 75W (Tc). The low on-resistance (Rds On) of 2.26mOhm at 50A and 10V drive ensures efficient power transfer and minimal conduction losses.
Optimized for surface mounting, the IAUC100N04S6N022ATMA1 is supplied in the PG-TDSON-8 package and is qualified to AEC-Q101 standards, making it suitable for rigorous automotive environments. Key parameters include a maximum gate charge (Qg) of 39 nC at 10V and an input capacitance (Ciss) of 2421 pF at 25V. The operating temperature range extends from -55°C to 175°C (TJ). This MOSFET is utilized in various automotive subsystems requiring robust power switching capabilities.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.26mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 32µA |
| Supplier Device Package | PG-TDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2421 pF @ 25 V |
| Qualification | AEC-Q101 |
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