IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUC100N04S6N015ATMA1, is designed for high-performance applications. This AEC-Q101 qualified component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.55mOhm at 50A and 10V, it delivers efficient power handling up to 100W (Tc). The device is specified with a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 3470 pF at 25V. The IAUC100N04S6N015ATMA1 utilizes N-Channel Metal Oxide semiconductor technology and is supplied in a PG-TDSON-8 package suitable for surface mounting. It operates across a temperature range of -55°C to 175°C (TJ). This component is commonly found in automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 50µA |
| Supplier Device Package | PG-TDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 25 V |
| Qualification | AEC-Q101 |
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