IAUC100N04S6L020ATMA1
IAUC100N04S6L020ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUC100N04S6L020ATMA1, is a high-performance discrete semiconductor designed for demanding automotive applications. This AEC-Q101 qualified device features a 40V drain-source voltage and a continuous drain current capability of 100A at 25°C (Tc). Its exceptionally low on-resistance of 2.04mOhm at 50A and 10V gate drive makes it ideal for power switching and management circuits. The MOSFET offers a maximum power dissipation of 75W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a compact PG-TDSON-8 (8-PowerTDFN) surface mount configuration, it is supplied on a tape and reel. Key electrical characteristics include a maximum gate charge of 46nC at 10V and input capacitance of 2744pF at 25V. This component is suitable for electric vehicle powertrains, battery management systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.04mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 32µA |
| Supplier Device Package | PG-TDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2744 pF @ 25 V |
| Qualification | AEC-Q101 |
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