IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IAUC100N04S6L014ATMA1 is a 40 V N-Channel power MOSFET designed for demanding automotive applications. This surface mount component, packaged in a PG-TDSON-8, offers a continuous drain current capability of 100A (Tc) and a maximum power dissipation of 100W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 1.4mOhm at 50A and 10V, and a gate charge (Qg) of 65 nC at 10 V. The device features a drain-source breakdown voltage (Vdss) of 40 V and an operating temperature range from -55°C to 175°C (TJ). Qualifying for AEC-Q101, this MOSFET is suitable for automotive power management systems and electric vehicle powertrains.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TDSON-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3935 pF @ 25 V |
| Qualification | AEC-Q101 |
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