IAUAN04S7N008AUMA1
IAUAN04S7N008AUMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 series N-Channel power MOSFET, part number IAUAN04S7N008AUMA1. This AEC-Q101 qualified component features a 40 V drain-source voltage and a continuous drain current of 40 A at 25°C ambient, with a 290 A pulsed capability. The low on-resistance is specified at 0.82 mOhm maximum at 90 A and 10 V gate-source voltage. With a maximum power dissipation of 133 W at the case temperature, this MOSFET is designed for demanding applications. Key parameters include a gate charge of 78 nC typical at 10 V and input capacitance of 5410 pF maximum at 20 V. The device is housed in a PG-HSOF-5-2 package, suitable for surface mounting, and operates across a temperature range of -55°C to 175°C. This component is widely utilized in automotive applications. Supplied in Digi-Reel®.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 290A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.82mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 133W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 60µA |
| Supplier Device Package | PG-HSOF-5-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5410 pF @ 20 V |
| Qualification | AEC-Q101 |
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