IAUAN04S7N006AUMA1
IAUAN04S7N006AUMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IAUAN04S7N006AUMA1, from the OptiMOS™ 7 series. This automotive-grade component features a 40 V drain-source voltage and a continuous drain current of 50 A at 25°C (Ta), scaling to 410 A at 175°C (Tj). With a maximum power dissipation of 179 W (Tc) and a low on-resistance of 0.57 mOhm at 100 A and 10 V, it is designed for high-efficiency power switching applications. The IAUAN04S7N006AUMA1 utilizes advanced Metal Oxide technology and is packaged in a PG-HSOF-5-1 (5-PowerSFN) surface mount configuration, supplied on tape and reel. Key electrical characteristics include a gate charge of 123 nC at 10 V and input capacitance of 8360 pF at 20 V. This component is suitable for demanding automotive powertrain and body electronics applications.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta), 410A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.57mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 95µA |
| Supplier Device Package | PG-HSOF-5-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8360 pF @ 20 V |
| Qualification | AEC-Q101 |
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