IAUAN04S7N005AUMA1
IAUAN04S7N005AUMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 N-Channel MOSFET, part number IAUAN04S7N005AUMA1, offers a 40V drain-source breakdown voltage and supports a continuous drain current of 50A at 25°C ambient and up to 455A at 175°C junction temperature. This device features a low on-resistance of 0.51mOhm maximum at 100A and 10V Vgs, with a maximum power dissipation of 198W at 25°C case temperature. The IAUAN04S7N005AUMA1 utilizes a PG-HSOF-5-1 (5-PowerSFN) surface mount package, supplied in Digi-Reel®. Key specifications include a maximum gate charge (Qg) of 143 nC at 10V Vgs and input capacitance (Ciss) of 9820 pF at 20V Vds. With AEC-Q101 qualification, this automotive-grade MOSFET is suitable for demanding applications in automotive power management and industrial power conversion.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta), 455A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.51mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 110µA |
| Supplier Device Package | PG-HSOF-5-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9820 pF @ 20 V |
| Qualification | AEC-Q101 |
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