IAUAN04S7N004AUMA1
IAUAN04S7N004AUMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 7 series N-Channel power MOSFET, part number IAUAN04S7N004AUMA1. This AEC-Q101 qualified component offers a 40V drain-source voltage and a continuous drain current of 70A at ambient temperature (570A at junction temperature). Featuring a low Rds(on) of 0.39mOhm at 100A and 10V, it is designed for efficient power switching. The device has a maximum power dissipation of 238W at case temperature and a maximum junction temperature of 175°C. Key parameters include a gate charge of 190 nC at 10V and an input capacitance of 12900 pF at 20V. Mounted in a PG-HSOF-5-5 (5-PowerSFN) surface mount package, this MOSFET is supplied on tape and reel. Its robust design makes it suitable for automotive applications.
Additional Information
Series: OptiMOS™ 7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta), 570A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.39mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 150µA |
| Supplier Device Package | PG-HSOF-5-5 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12900 pF @ 20 V |
| Qualification | AEC-Q101 |
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