IAUA250N08S5N018AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IAUA250N08S5N018AUMA1, is a high-performance component within the OptiMOS™ series. This surface mount device features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 250A at 25°C (Tj). The IAUA250N08S5N018AUMA1 offers a low on-resistance (Rds On) of 1.8mOhm at 100A and 10V. Key electrical characteristics include a gate charge (Qg) of 125 nC at 10V and input capacitance (Ciss) of 8715 pF at 40V. With a maximum power dissipation of 238W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is engineered for demanding applications. It is supplied in the PG-HSOF-5-4 package, sold on tape and reel (TR). This component is suitable for power management solutions across various industrial and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 150µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8715 pF @ 40 V |
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